Remote Surface Roughness Scattering in FDSOI devices with high-$\kappa$/SiO$_2$ gate stacks

摘要

We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices usingNon-Equilibrium Green's Functions. We show that the RSR mobility is controlledby cross-correlations between the surface roughness profiles at the Si/SiO$_2$and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surfaceroughness can not be modeled as two independent mechanisms. RSR tends toenhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thicknessprofiles are correlated, and to decrease the total mobility when they areanti-correlated. We discuss the implications for the high-$\kappa$/Metal gatetechnologies.